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| Final Data Sheet IPB180P04P4-03 OptiMOS(R)-P2 Power-Transistor Product Summary V DS R DS(on) ID -40 2.8 -180 V mW A Features * P-channel - Normal Level - Enhancement mode * AEC qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green package (RoHS compliant) * 100% Avalanche tested Drain Pin 4, Tab Gate Pin 1 Source Pin 2, 3, 5, 6, 7 PG-TO263-7-3 Type IPB180P04P4-03 Package PG-TO263-7-3 Marking 4QP0403 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions T C=25C, V GS=-10V T C=100C, V GS=-10V2) Pulsed drain current2) Avalanche energy, single pulse Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25C I D=-60A T C=25 C Value Unit Continuous drain current1) ID -180 A -131 -720 90 -180 20 150 -55 ... +175 55/175/56 mJ A V W C Rev. 1.0 page 1 2011-04-27 Final Data Sheet IPB180P04P4-03 Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0V, I D= -1mA V GS(th) I DSS V DS=V GS, I D=-410A V DS=-32V, V GS=0V, T j=25C V DS=-32V, V GS=0V, T j=125C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=-20V, V DS=0V V GS=-10V, I D=-100A -40 -2.0 -3.0 -0.1 -4.0 -1 A V 1.0 62 62 40 K/W - -20 2.0 -200 -100 2.8 nA mW Rev. 1.0 page 2 2011-04-27 Final Data Sheet IPB180P04P4-03 Parameter Symbol Conditions min. Values typ. max. Unit Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage Reverse recovery time2) Reverse recovery charge2) 1) C iss C oss Crss t d(on) tr t d(off) tf V DD=-20V, V GS=-10V, I D=-180A, R G=3.5W V GS=0V, V DS=-25V, f =1MHz - 13570 4070 110 48 31 72 81 17640 pF 5290 220 ns Q gs Q gd Qg V plateau V DD=-32V, I D=-180A, V GS=0 to -10V - 70 35 190 -5.2 95 70 250 - nC V IS I S,pulse V SD t rr Q rr T C=25C V GS=0V, I F=-100A, T j=25C V R=-20V, I F=-50A, di F/dt =-100A/s - -1 83 131 -180 -720 -1.3 - A V ns nC Current is limited by bondwire; with an R thJC = 1.0K/W the chip is able to carry -185A at 25C. Defined by design. Not subject to production test. 2) 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2011-04-27 Final Data Sheet IPB180P04P4-03 1 Power dissipation P tot = f(T C); V GS -6V 2 Drain current I D = f(T C); V GS -6V; SMD 160 200 180 160 140 120 140 100 120 P tot [W] 80 -I D [A] 0 50 100 150 200 100 80 60 60 40 40 20 20 0 0 50 100 150 200 0 T C [C] T C [C] 3 Safe operating area I D = f(V DS); T C = 25 C; D = 0; SMD parameter: t p 1000 1 s 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 1 ms 100 s 10 s 100 0.5 100 Z thJC [K/W] -I D [A] 10-1 0.1 0.05 10 10-2 0.01 single pulse 1 0.1 1 10 100 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 -V DS [V] t p [s] Rev. 1.0 page 4 2011-04-27 Final Data Sheet IPB180P04P4-03 5 Typ. output characteristics I D = f(V DS); T j = 25 C; SMD parameter: V GS 720 -10V -8V -7V 6 Typ. drain-source on-state resistance R DS(on) = (I D); T j = 25 C; SMD parameter: V GS 10 -5V -5.5V 640 560 480 400 -6V -6.5V 7 320 240 160 80 0 0 1 2 3 4 5 6 R DS(on) [mW] 4 -I D [A] -6V -6.5V -6.5V -7V -8V -10V 1 0 80 160 -V DS [V] -I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = -6V parameter: T j 720 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = -100 A; V GS = -10 V; SMD 3.5 630 3 540 R DS(on) [mW] 175 C 25 C -55 C 450 2.5 -I D [A] 360 270 2 180 1.5 90 1 2 3 4 5 6 7 8 -60 -20 20 60 100 140 180 0 -V GS [V] T j [C] Rev. 1.0 page 5 2011-04-27 Final Data Sheet IPB180P04P4-03 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 4 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 105 3.5 104 3 -4100A Ciss Coss -V GS(th) [V] C [pF] -410A 2.5 103 2 102 1.5 Crss 1 -60 -20 20 60 100 140 180 101 0 5 10 15 20 25 30 T j [C] -V DS [V] 11 Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Drain-source breakdown voltage V BR(DSS) = f(T j); I D = -1 mA 45 44 43 42 102 -V BR(DSS) [V] 1 1.2 1.4 41 40 39 38 37 36 -I F [A] 175 C 25 C 10 1 100 0 0.2 0.4 0.6 0.8 35 -60 -20 20 60 100 140 180 -V SD [V] T j [C] Rev. 1.0 page 6 2011-04-27 Final Data Sheet IPB180P04P4-03 13 Typ. gate charge V GS = f(Q gate); I D = -180 A pulsed parameter: V DD 12 14 Gate charge waveforms V GS 10 Qg 8 -V GS [V] -8V -32V 6 4 2 Q gs Q gd Q gate 0 0 20 40 60 80 100 120 140 160 180 200 Q gate [nC] Rev. 1.0 page 7 2011-04-27 Final Data Sheet IPB180P04P4-03 Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2011 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2011-04-27 Final Data Sheet IPB180P04P4-03 Revision History Version 0.1 1.0 Date Changes 08.03.2010 Initial Target Data Sheet 27.04.2011 Final Data Sheet Rev. 1.0 page 9 2011-04-27 |
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